CAT28F010P - 1 Megabit CMOS Flash Memory - Catalyst Semiconductor
■ Fast Read Access Time: 70/90/120 ns
■ Low Power CMOS Dissipation:
–Active: 30 mA max (CMOS/TTL levels)
–Standby: 1 mA max (TTL levels)
–Standby: 100 µA max (CMOS levels)
■ High Speed Programming:
–10 µs per byte
–2 Sec Typ Chip Program
■ 0.5 Seconds Typical Chip-Erase
■ 12.0V ± 5% Programming and Erase Voltage
■ Stop Timer for Program/Erase
■ Commercial, Industrial and Automotive
Temperature Ranges
■ On-Chip Address and Data Latches
■ JEDEC Standard Pinouts:
–32-pin DIP
–32-pin PLCC
–32-pin TSOP (8 x 20)
■ 100,000 Program/Erase Cycles
■ 10 Year Data Retention
■ Electronic Signature
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