K9F1G08U0 - FLASH MEMORY - Samsung semiconductor
FEATURES
· Voltage Supply
-1.8V device(K9F1G08Q0A): 1.70V~1.95V
-3.3V device(K9F1G08U0A): 2.7 V ~3.6 V
· Organization
- Memory Cell Array : (128M + 4,096K)bit x 8bit
- Data Register : (2K + 64)bit x8bit
- Cache Register : (2K + 64)bit x8bit
· Automatic Program and Erase
- Page Program : (2K + 64)Byte
- Block Erase : (128K + 4K)Byte
· Page Read Operation
- Page Size : 2K-Byte
- Random Read : 25ms(Max.)
- Serial Access : 30ns(Min.) : (K9F1G08U0A)
50ns(Min.) : (K9F1G08Q0A)
**注意 & Noted:
Because of wholesale price is different from sample price, our website can not state. Please send your required part number via email to Sales@hkmjd.com or add our skype id mjdccm898 for online talking.As well as welcome you call us : 0755-83957301 We will send offer for you; Sometimes manufacturer's price is unstable, so we don't adjust price in time. if you feel price is a little high for you, just feel free to contact us for consultation. Thank you for your support !
由于批量与样品的价格不同,网上无法统一注明,请您把采购型号通过邮件或客服发给我们,也可致电明佳达国内销售部:0755-83957301,由客服人员为您报价;有时元件厂商价格稍许变动,本公司未能及时调整,如您觉得售价偏高,请与我们说明并适当议价;感谢支持!