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HY57V641620HGT-7

HY57V641620HGT-7
型号:HY57V641620HGT-7
品牌:Hynix Hynix
批号:13+RoHs
封装:TSOP
原价:15
数量:68000
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备注:100% 全新原装 (New and original)
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详细描述

 HY57V641620HGT-7

4 Banks x 1M x 16Bit Synchronous DRAM
 
 
 
D E S C R IP T IO N
The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which
require large memory density and high bandwidth. HY57V641620HG is organized as 4banks of 1,048,576x16. 
HY57V641620HG is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input and output
voltage levels are compatible with LVTTL.
Programmable options include the length of pipeline (Read latency of 2 or 3), the number of consecutive read or write cycles initiated
by a single control command (Burst length of 1,2,4,8 or Full page), and the burst count sequence(sequential or interleave). A burst of
read or write cycles in progress can be terminated by a burst terminate command or can be interrupted and replaced by a new burst
read or write command on any cycle. (This pipelined design is not restricted by a `2N` rule.)
 
 
 
Because of wholesale price is different from sample price, our website can not state.Please send your required part number via email to Sales@hkmjd.com or add our skype id mjdccm898 for online talking.As well as welcome you call us : 0755-83957301  We will send offer for you;  Sometimes manufacturer's price is unstable, so we don't adjust price in time. if you feel price is a little high for you, just feel free to contact us for consultation. Thank you for your support !
 
 
批发与零售价位不同,无法一一明示,详情请通过邮件或客服咨询(国内销售部电话:0755-83957301,企业QQ2850151585), 由于电子元器件价格不稳定,时常有稍许变动,本公司未能及时调整,如您觉得售价不适,请与我们说明并适当议价,谢谢支持。
 
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