FDS8958A

 

 

These dual N- and P-Channel enhancement mode

power field effect transistors are produced using

Fairchild Semiconductor’s advanced PowerTrench

process that has been especially tailored to minimize

on-state ressitance and yet maintain superior switching

performance.

These devices are well suited for low voltage and

battery powered applications where low in-line power

loss and fast switching are required.

 

 

 

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