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RA08N1317M-101

RA08N1317M-101
型号:RA08N1317M-101
品牌:MIT MIT
批号:13+
封装:RF Power Transistor
原价:130
数量:23658
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备注:Origina in stock 原装现货
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详细描述

RA08N1317M-101

135-175MHz 8W 9.6V PORTABLE RADIO
 
 
DESCRIPTION
The RA08N1317M is a 8-watt RF MOSFET Amplifier Module 
for 9.6-volt portable radios that operate in the 135- to 175-MHz 
range.
The battery can be connected directly to the drain of the 
enhancement-mode MOSFET transistors. Without the gate 
voltage (VGG=0V), only a small leakage current flows into the drain 
and the RF input signal attenuates up to 60 dB. The output power 
and drain current increase as the gate voltage increases.  With a 
gate voltage around 2.5V (minimum), output power and drain 
current increases substantially. The nominal output power 
becomes available at 3V (typical) and 3.5V (maximum). At 
VGG=3.5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may 
also be used for linear modulation by setting the drain quiescent 
current with the gate voltage and controlling the output power with 
the input power.
 
 
 
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD@0  @ VDD=9.6V, VGG=0V)
• Pout>8W  @ VDD=9.6V, VGG=3.5V, Pin=20mW
• hT>50%  @ Pout=8W (VGG control), VDD=9.6V, Pin=20mW
• Broadband Frequency Range: 135-175MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=3.5V
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain current 
with the gate voltage and controlling the output power with the 
input power
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