MBRS340T3G

Surface Mount Schottky Power Rectifier

 

 

These devices employ the Schottky Barrier principle in a large area

metal−to−silicon power diode. State−of−the−art geometry features

epitaxial construction with oxide passivation and metal overlay

contact. Ideally suited for low voltage, high frequency rectification, or

as free wheeling and polarity protection diodes, in surface mount

applications where compact size and weight are critical to the system.

 

 

 

Features

 Small Compact Surface Mountable Package with J−Bend Leads

 Rectangular Package for Automated Handling

 Highly Stable Oxide Passivated Junction

 Very Low Forward Voltage Drop

(0.5 V Max @ 3.0 A, TJ

 = 25°C)

 Excellent Ability to Withstand Reverse Avalanche Energy Transients

 Guard−Ring for Stress Protection

 Device Passes ISO 7637 Pulse #1

 Pb−Free Packages are Available

Mechanical Characteristics

 Case: Epoxy, Molded, Epoxy Meets UL 94 V−0

 Weight: 217 mg (Approximately)

 Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

 Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

 Polarity: Notch in Plastic Body Indicates Cathode Lead

 Device Meets MSL 1 Requirements

 ESD Ratings: Machine Model, C > 400 V

Human Body Model, 3B > 8000 V

 

 

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