E53NA50 - N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR - STMicroelectronics
■ TYPICAL RDS(on) = 0.075 Ω
■ HIGH CURRENT POWER MODULE
■ AVALANCHERUGGED TECHNOLOGY
■ VERY LARGE SOA - LARGE PEAK POWER
CAPABILITY
■ EASY TO MOUNT
■ SAME CURRENT CAPABILITY FOR THE
TWO SOURCE TERMINALS
■ EXTREMELY LOW Rth (Junction to case)
■ VERY LOW INTERNAL PARASITIC
INDUCTANCE
■ ISOLATED PACKAGE UL RECOGNIZED
**注意 & Noted:
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