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M28F101-150K1

型号：M28F101-150K1
品牌：ST

批号：13+RoHs
封装：DIP
原价：20
数量：68000
PDF电子文档：

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备注：100% 全新原装 (New and original)

详细描述

M28F101-150K1

1 Mb 128K x 8, Chip Erase FLASH MEMORY

5V ±10% SUPPLY VOLTAGE

12V PROGRAMMING VOLTAGE

FAST ACCESS TIME: 70ns

BYTE PROGRAMING TIME: 10µs typical

ELECTRICAL CHIP ERASE in 1s RANGE

LOW POWER CONSUMPTION

Stand-by Current: 100µA max

10,000 ERASE/PROGRAM CYCLES

INTEGRATED ERASE/PROGRAM-STOP

TIMER

OTP COMPATIBLE PACKAGES and PINOUTS

ELECTRONIC SIGNATURE

ManufacturerCode: 20h

Device Code: 07h

DESCRIPTION

The M28F101 FLASH Memory is a non-volatile

memory which may be erased electrically at the

chip level and programmed byte-by-byte. It is organisedas 128K bytes of 8 bits.It usesa command

and thus provides a simple microprocessor interface. The M28F101 FLASH Memory is suitable for

applications where the memory has to be reprogrammed in the equipment. The access time of

70ns makes the device suitable for use in high

speed microprocessor systems.

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