BUK9575-100

 GENERAL DESCRIPTION QUICK REFERENCE DATA

N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT

level field-effect power transistor in a

plastic envelope using ’trench’ VDS Drain-source voltage 55 V

technology. The device features very ID Drain current (DC) 19.7 A

low on-state resistance and has Ptot Total power dissipation 61 W

integral zener diodes giving ESD Tj Junction temperature 175 ˚C

protection up to 2kV. It is intended for RDS(ON) Drain-source on-state 75 mΩ

use in automotive and general resistance VGS = 5 V

purpose switching applications.

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