ISL9N310AS3ST
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Applications
DC/DC converters
Features
Fast switching
rDS(ON)
= 0.008Ω (Typ), VGS = 10V
rDS(ON)
= 0.0115Ω (Typ), VGS = 4.5V
Qg
(Typ) = 17nC, VGS = 5V
Qgd
(Typ) = 5.4nC
CISS (Typ) = 1800pF
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