HY29F002TC-90 - 2 Megabit (256K x 8), 5 Volt-only, Flash Memory - Hynix Semiconductor
5 Volt Read, Program, and Erase
– Minimizes system-level power requirements
High Performance
– Access times as fast as 45 ns
Low Power Consumption
– 20 mA typical active read current
– 30 mA typical program/erase current
– 1 µA typical CMOS standby current
Fast Program and Erase Times
– Byte programming time: 7 µs typical
– Sector erase time: 1.0 sec typical
– Chip erase time: 7 sec typical
Data# Polling and Toggle Status Bits
– Provide software confirmation of
completion of program or erase
operations
Minimum 100,000 Program/Erase Cycles
Space Efficient Packaging
– Available in industry-standard 32-pin
TSOP and PLCC packages
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