HN1B01FDW1T1G HN1B01FDW1 -- Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount
Features
• High Voltage and High Current: VCEO = 50 V, IC = 200 mA
• High hFE: hFE = 200400
• Moisture Sensitivity Level: 1
• ESD Rating − Human Body Model: 3A
− Machine Model: C
• Pb−Free Package is Available
包装 |
带卷 (TR) |
晶体管类型 |
NPN,PNP |
电流 - 集电极 (Ic)(最大值) |
200mA |
电压 - 集射极击穿(最大值) |
50V |
不同 Ib、Ic 时的 Vce 饱和值(最大值) |
250mV @ 10mA,100mA / 300mV @ 10mA,100mA |
电流 - 集电极截止(最大值) |
2µA |
不同 Ic、Vce 时的 DC 电流增益 (hFE)(最小值) |
200 @ 2mA,6V |
功率 - 最大值 |
380mW |
频率 - 跃迁 |
- |
安装类型 |
表面贴装 |
封装/外壳 |
SC-74,SOT-457 |
供应商器件封装 |
SC-74 |
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