NLAS44599DTR2G

 

 

Channel Select Input Over−Voltage Tolerant to 5.5 V

Fast Switching and Propagation Speeds

Break−Before−Make Circuitry

Low Power Dissipation: ICC = 2 A (Max) at TA = 25°C

Diode Protection Provided on Channel Select Input

Improved Linearity and Lower ON Resistance over Input Voltage

Latch−up Performance Exceeds 300 mA

ESD Performance: Human Body Model; > 2000 V,

Machine Model; > 200 V

Chip Complexity: 158 FETs

Pb−Free Packages are Available

 

 

 

**注意 & Noted:

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