NTD2955 NTD2955T4G -- Power MOSFET
Features
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Designed for Low−Voltage, High−Speed Switching Applications and to Withstand High Energy in the Avalanche and Commutation Modes
• NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
| FET 类型 |
MOSFET P 通道，金属氧化物 |
| FET 功能 |
标准 |
| 漏源极电压 (Vdss) |
60V |
| 电流 - 连续漏极 (Id)（25°C 时） |
12A （Ta） |
| 不同 Id、Vgs 时的 Rds On（最大值） |
180 毫欧 @ 6A，10V |
| 不同 Id 时的 Vgs(th)（最大值） |
4V @ 250µA |
| 不同 Vgs 时的栅极电荷 (Qg) |
30nC @ 10V |
| 不同 Vds 时的输入电容 (Ciss) |
750pF @ 25V |
| 功率 - 最大值 |
55W |
| 安装类型 |
表面贴装 |
| 封装/外壳 |
TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商器件封装 |
DPAK-3 |
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